Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures-Reference-Cited by-同舟云学术

Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

Published:2005-10 Issue:1-2 Volume:552 Page:82-87
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Gaubas E.,Pobedinskas P.,Vaitkus J.,Uleckas A.,Žukauskas A.,Blue A.,Rahman M.,Smith K.M.,Aujol E.,Beaumont B.,Faurie J.-P.,Gibart P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

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