Point defects in gamma-irradiated n-GaN-Reference-Cited by-同舟云学术

Point defects in gamma-irradiated n-GaN

Published:2000-01-01 Issue:1 Volume:15 Page:73-78
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Emtsev V V,Davydov V Yu,Kozlovskii V V,Lundin V V,Poloskin D S,Smirnov A N,Shmidt N M,Usikov A S,Aderhold J,Klausing H,Mistele D,Rotter T,Stemmer J,Semchinova O,Graul J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Atomic geometry and electronic structure of native defects in GaN

2. Native defects in gallium nitride

3. Gallium vacancies and the yellow luminescence in GaN

4. Point-defect complexes and broadband luminescence in GaN and AlN

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