Growth-induced defects in AlN/GaN superlattices with different periods-Reference-Cited by-同舟云学术

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Growth-induced defects in AlN/GaN superlattices with different periods

Published:2003-12 Issue: Volume:340-342 Page:1129-1132
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Valcheva E.,Paskova T.,Radnoczi G.Z.,Hultman L.,Monemar B.,Amano H.,Akasaki I.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices

2. Strain relaxation in (0001) AlN/GaN heterostructures

3. Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects;Materials & Design;2018-11

2. Solar- and Visible-Blind AlGaN Photodetectors;III-Nitride Ultraviolet Emitters;2015-11-13

3. Defect Suppression in AlN Epilayer Using Hierarchical Growth Units;The Journal of Physical Chemistry C;2013-07-01

4. X-ray diffraction study of AlN∕AlGaN short period superlattices;Journal of Applied Physics;2007-12

5. Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE;Journal of Crystal Growth;2005-05

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