Solar- and Visible-Blind AlGaN Photodetectors-Reference-Cited by-同舟云学术

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Solar- and Visible-Blind AlGaN Photodetectors

Published:2015-11-13 Issue: Volume: Page:219-266
ISSN:0933-033X
Container-title:III-Nitride Ultraviolet Emitters
language:
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Author:

Brendel Moritz,Pertzsch Enrico,Abrosimova Vera,Trenkler Torsten,Weyers Markus

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-24100-5_9

Reference183 articles.

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2. S. Einfeldt, V. Kirchner, H. Heinke, M. Dießelberg, S. Figge, K. Vogeler, D. Hommel, Strain relaxation in AlGaN under tensile plane stress. J. Appl. Phys. 88(12), 7029–7036 (2000)

3. M. Asif Khan, R.A. Skogman, J.M. Van Hove, D.T. Olson, J.N. Kuznia, Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition. Appl. Phys. Lett. 60(11), 1366–1368 (1992)

4. E. Valcheva, T. Paskova, G. Radnoczi, L. Hultman, B. Monemar, H. Amano, and I. Akasaki, Growth-induced defects in AlN/GaN superlattices with different periods. Phys. B: Condens. Matter 340–342(0), 1129–1132 (2003). (Proceedings of the 22nd international conference on defects in semiconductors)

5. J.P. Zhang, H.M. Wang, M.E. Gaevski, C.Q. Chen, Q. Fareed, J.W. Yang, G. Simin, M.A. Khan, Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management. Appl. Phys. Lett. 80(19), 3542–3544 (2002)

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