Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. GaN, AlN, and InN: A review
2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
3. Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
4. The Polarity of GaN: a Critical Review
5. High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
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1. Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate;Fundamental Research;2021-12
2. AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter;IEEE Transactions on Electron Devices;2013-09
3. Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates;physica status solidi (c);2011-03-31
4. Investigation of the Electrostatic Discharge Performance of GaN-Based Light-Emitting Diodes With Naturally Textured p-GaN Contact Layers Grown on Miscut Sapphire Substrates;IEEE Transactions on Electron Devices;2010-09
5. Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates;Journal of Electronic Materials;2010-03-27
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