Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364368
Reference10 articles.
1. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy
2. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure
3. Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures
4. Screw dislocations and discrete elastic theory
5. Piezoelectric materials for acoustic wave applications
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