X-ray diffraction study of AlN∕AlGaN short period superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2821358
Reference34 articles.
1. Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes
2. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy
3. GaN/AlN digital alloy short‐period superlattices by switched atomic layer metalorganic chemical vapor deposition
4. Growth and Optical Properties of Quaternary InAlGaN for 300 nm Band UV-Emitting Devices
5. AlN/AlGaInN superlattice light-emitting diodes at 280 nm
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4. Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements;Micron;2020-07
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