Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method-Reference-Cited by-同舟云学术

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Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method

Published:2021-01 Issue: Volume:600 Page:412624
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Zhang Kun^ORCID,Xu Zongwei,Zhang Shengnan,Wang Hong,Cheng Hongjuan,Hao Jianmin,Wu Jintong,Fang Fengzhou^ORCID

Funder

National Natural Science Foundation of China

Ministry of Education of the People's Republic of China

State Administration of Foreign Experts Affairs

State Key Laboratory of Precision Measurement Technology and Instruments

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Strong room-temperature emission from defect states in CVD-grown WSe2 nanosheets

2. Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application

3. A review of Ga2O3materials, processing, and devices

4. Nanoplasmonically Enhanced High-Performance Metastable Phase α-Ga2O3 Solar-Blind Photodetectors

5. Preparation of Ga2O3 photocatalyst highly active for CO2 reduction with water without cocatalyst

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4. Beta to Spinel Phase Transition of Magnesium Gallium Oxide Thin Films and Their Photoluminescence Properties;ACS Applied Electronic Materials;2024-08-28

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