Beta to Spinel Phase Transition of Magnesium Gallium Oxide Thin Films and Their Photoluminescence Properties-Reference-Cited by-同舟云学术

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Beta to Spinel Phase Transition of Magnesium Gallium Oxide Thin Films and Their Photoluminescence Properties

Published:2024-08-28 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yang Tianchen¹^ORCID,Shou Chengyun¹,Almujtabi Abdullah¹,Mahmud Quazi Sanjid¹,Zhu Edward¹,Li Yuan¹,Liu Jianlin¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States

Funder

Air Force Office of Scientific Research

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01079

Reference50 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

3. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

4. A review of Ga2O3materials, processing, and devices

5. Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

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