Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application-Reference-Cited by-同舟云学术

Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application

Published:2020-06-15 Issue:24 Volume:116 Page:243503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Feng Zhaoqing¹^ORCID,Cai Yuncong¹,Li Zhe¹,Hu Zhuangzhuang¹^ORCID,Zhang Yanni¹^ORCID,Lu Xing²^ORCID,Kang Xuanwu³^ORCID,Ning Jing¹,Zhang Chunfu¹^ORCID,Feng Qian¹,Zhang Jincheng¹,Zhou Hong¹^ORCID,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funder

National key Research and Development Program of China

National 111 centre

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0010561

Reference31 articles.