Affiliation:
1. Innovation Center for Gallium Oxide Semiconductor (IC‐GAO) College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China
2. College of Physics MIIT Key Laboratory of Aerospace Information Materials and Physics Nanjing University of Aeronautics and Astronautics Nanjing 211106 China
3. School of Electronic Information Engineering Inner Mongolia University Hohhot 010021 China
4. Institute of Biological and Medical Engineering Guangdong Academy of Sciences Guangzhou 510316 China
Abstract
AbstractThe rapidly developing Artificial Intelligence era has an increasing demand for high‐performance organ‐on‐a‐chip systems, especially the vision system, which is the most essential perceptual system for human beings. However, traditional artificial vision systems require multiple functional components, which are not favorable for integration. Neuromorphic visual sensors (NVSs) inspired by the human retina combine visual sensing and multiple preprocessing functions. However, most NVSs require complex structures to achieve both photo sensing and memory, and are difficult to be large‐scale fabricated. Here, a novel In2O3‐Ga2O3 (InGaO) thin‐film‐based NVS with both high photosensitivity and superior photomemory performance is proposed, which can avoid the complex multilayer structure. The device possesses high accuracy optical communication and multiple retina‐like functions. Notably, this InGaO NVS achieves sensing of most UV light, and it has been experimentally confirmed to have excellent photoelectric synaptic performance under both 254 nm and 365 nm UV illumination. This work provides a feasible strategy to assist the human eye in sensing invisible UV light.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province
Major Basic Research Project of the Natural Science Foundation of the Jiangsu Higher Education Institutions