The behavior of two-dimensional electron gas in GaN/AlxGa1−xN/GaN heterostructures with very thin AlxGa1−xN barriers
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Influence of strain relaxation of the AlxGa1−xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructures
2. Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
3. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
4. Current‐voltage characteristics of strained piezoelectric structures
5. Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures
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