Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1352558
Reference26 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
3. Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
4. Electron mobility in modulation-doped AlGaN–GaN heterostructures
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