Influence of strain relaxation of the AlxGa1−xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructures-Reference-Cited by-同舟云学术

Influence of strain relaxation of the AlxGa1−xN barrier on transport properties of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructures

Published:2000-05-08 Issue:19 Volume:76 Page:2746-2748
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shen B.,Someya T.,Arakawa Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.126463

Reference17 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

3. GaN microwave electronics

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. Piezoelectric charge densities in AlGaN/GaN HFETs

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