A Difference-Microvariation Solution and Analytical Model for Generic HEMTs
Author:
Affiliation:
1. Department of Electronic Engineering, Key Laboratory of New Semiconductors and Devices of Universities in Guangdong Province, Jinan University, Guangzhou, China
Funder
Guangdong Natural Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9901396/09858868.pdf?arnumber=9858868
Reference20 articles.
1. A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression
2. A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages
3. Analytical Models for the 2DEG Density, AlGaN Layer Carrier Density, and Drain Current for AlGaN/GaN HEMTs
4. A Lumped-Parameter Equivalent Circuit Model for Perovskite Solar Cells’ S-Shaped I-V Kinks
5. DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Channel Temperature Analysis and Nonlinear Thermal Model of AlGaN/GaN HEMTs Including Steady-State and Transient;IEEE Transactions on Electron Devices;2023-05
2. Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-04-24
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