Channel Temperature Analysis and Nonlinear Thermal Model of AlGaN/GaN HEMTs Including Steady-State and Transient-Reference-Cited by-同舟云学术

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Channel Temperature Analysis and Nonlinear Thermal Model of AlGaN/GaN HEMTs Including Steady-State and Transient

Published:2023-05 Issue:5 Volume:70 Page:2222-2228
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Yi¹^ORCID,Chen Kaoming¹^ORCID,Cen Xiaolin¹,Ma Xiaoyu¹,Deng Wanling¹^ORCID,Huang Junkai¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, China

Funder

Guangdong Natural Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10070442.pdf?arnumber=10070442

Reference29 articles.

1. Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices

2. Thermal simulation of high power GaN-on-diamond substrates for HEMT applications

3. Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

4. Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

5. Theory of Thermal Time Constants in GaN High-Electron-Mobility Transistors

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1. Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs;IEEE Transactions on Electron Devices;2023-10

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