Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs-Reference-Cited by-同舟云学术

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Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs

Published:2023-10 Issue:10 Volume:70 Page:5217-5222
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

González Benito¹^ORCID,Lazaro Antonio²^ORCID,Rodríguez Raúl¹^ORCID

Affiliation:

1. Institute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Campus Universitario de Tafira, Las Palmas, Spain

2. Department of Electronics, Electrics and Automatic Control Engineering, Escola Tècnica Superior d’Enginyeria, Universitat Rovira i Virgili, Tarragona, Spain

Funder

Spanish Ministerio de Ciencia e Innovación and Agencia Estatal de Investigación, MCIN/AEI/10

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10230910.pdf?arnumber=10230910

Reference30 articles.

1. Thermal resistance calculation of AlGaN-GaN devices

2. RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

3. A Universal Scalable Thermal Resistance Model for Compact Large-Signal Model of AlGaN/GaN HEMTs

4. Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements

5. On the Separate Extraction of Self-Heating and Substrate Effects in FD-SOI MOSFET

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