Analytical Models for the 2DEG Density, AlGaN Layer Carrier Density, and Drain Current for AlGaN/GaN HEMTs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8299498/08276313.pdf?arnumber=8276313
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Physics-Based Compact I–V Model for δ-Doped β-(AlxGa1−x)₂O₃/Ga₂O₃ HFET Involving Parallel Conduction;IEEE Transactions on Electron Devices;2023-10
2. Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-04-24
3. A Difference-Microvariation Solution and Analytical Model for Generic HEMTs;IEEE Transactions on Electron Devices;2022-10
4. Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs;IEEE Electron Device Letters;2022-08
5. Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures;IEEE Transactions on Electron Devices;2022-07
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