Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping-Reference-Cited by-同舟云学术

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Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

Published:2024 Issue: Volume: Page:1-7
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Alaei Mojtaba¹^ORCID,Borga Matteo²^ORCID,Fabris Elena²^ORCID,Decoutere Stefaan²^ORCID,Lauwaert Johan³^ORCID,Bakeroot Benoit¹^ORCID

Affiliation:

1. Center for Microsystems Technology (CMST) and the Interuniversity Microelectronics Centre (IMEC), Ghent University, Ghent, Belgium

2. Interuniversity Microelectronics Center (IMEC), Leuven, Belgium

3. Liquid Crystals and Photonics Group (LCP), Ghent University, Ghent, Belgium

Funder

European Union’s Horizon 2020 Research and Innovation Program through the ASCENT+ Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/4358746/10648585.pdf?arnumber=10648585

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