A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/6837542/06819794.pdf?arnumber=6819794
Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation-based optimization of barrier and spacer layers in InAlN/GaN HEMTs for improved 2DEG density;Micro and Nanostructures;2024-11
2. Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile;IEEE Transactions on Electron Devices;2024-08
3. Physics-Based Models of 2DEG Density and Gate Capacitance for p-GaN/AlGaN/GaN Heterostructure;IEEE Transactions on Electron Devices;2024-07
4. Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor;Physics of the Solid State;2024-06
5. A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs;IEEE Transactions on Electron Devices;2024-03
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