Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile-Reference-Cited by-同舟云学术

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Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

Published:2024-08 Issue:8 Volume:71 Page:4563-4569
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Alaei Mojtaba¹^ORCID,Borga Matteo²^ORCID,Fabris Elena²^ORCID,Decoutere Stefaan²^ORCID,Lauwaert Johan³^ORCID,Bakeroot Benoit¹^ORCID

Affiliation:

1. Center for Microsystems Technology (CMST) and the Interuniversity Microelectronics Centre (IMEC), Ghent University, Ghent, Belgium

2. Interuniversity Microelectronics Centre (IMEC), Leuven, Belgium

3. Liquid Crystals and Photonics (LCP) Group, Ghent University, Ghent, Belgium

Funder

ASCENT+ Project funded by the European Union’s Horizon 2020 Research and Innovation Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10582890.pdf?arnumber=10582890

Reference19 articles.

1. Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

2. Modeling of Short-Channel Effects in GaN HEMTs

3. TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

4. Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

5. Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping;IEEE Transactions on Electron Devices;2024

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