Swift heavy ion irradiation induced modification of electrical characteristics of Au/n-Si Schottky barrier diode
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Effects of hydrogen ion implantation on Al/Si Schottky diodes
2. Effect of ion‐beam sputter damage on Schottky barrier formation in silicon
3. Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics
4. The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs
5. Electrical characterisation of high energy 12C irradiated Au/n-GaAs Schottky Barrier Diodes
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2. In situ IV and CV characterization of Pt/n-GaN Schottky barrier diodes irradiated by 100 MeV oxygen ions;Journal of Materials Science: Materials in Electronics;2023-09
3. Characterisation of interface states of Al/p-Si Schottky diode by current–voltage and capacitance–voltage–frequency measurements;Journal of Materials Science: Materials in Electronics;2023-08
4. 60Co gamma irradiation effects on GaN quasi-vertical Schottky barrier diodes with passivation layer and their post-irradiation annealing behavior;Applied Physics Express;2023-04-01
5. Effect of swift heavy ion irradiation on the electrical characteristics of oxide-based heterojunction;Metal Oxide Defects;2023
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