Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Comparison between deep level defects in GaAs induced by gamma, 1 MeV electron, and neutron irradiation
2. The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs
3. Electrical characteristics of neutron irradiation induced defects in n-GaAs
4. Current-voltage characteristics and charge DLTS spectra of proton-bombarded Schottky diodes on semi-insulating GaAs
5. Study of the effect of low energy electron irradiation on the density and relaxation time of metal-insulator-GaAs interface states
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