Study of the effect of low energy electron irradiation on the density and relaxation time of metal-insulator-GaAs interface states
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes;Current Applied Physics;2016-08
2. Investigations on the evaluation of schottky barrier diode parameters of the proton irradiated Ti/n-GaAs;Radiation Effects and Defects in Solids;2000-02
3. Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and its characteristics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04
4. On the enhancement of effective barrier height in Schottky barrier diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
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