Studies of Au‐GaAs (001) interfaces prepared by molecular beam epitaxy. II. Thermal stability of Au‐GaAs (001) interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335641
Reference31 articles.
1. Structure study of Au–GaAs(001) interfaces by HEIS, XPS, and RHEED
2. Interface chemistry of metal‐GaAs Schottky‐barrier contacts
3. Dynamical observation of room temperature interfacial reaction in metal-semiconductor system by Auger electron spectroscopy
4. Photoemission studies of the effect of temperature on the Au–GaAs(110) interface
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1. Strong blue emission from ZnSe nanowires grown at low temperature;physica status solidi (RRL) - Rapid Research Letters;2013-11-26
2. Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate;Applied Physics Letters;2013-11-25
3. GOLD DEPOSITION ON GaAs(001) SURFACES: MOLECULAR-DYNAMICS SIMULATIONS;International Journal of Modern Physics C;2002-07
4. Initial stages of the formation of the Au/GaAs(001) interface: A low‐energy ion scattering study;Journal of Applied Physics;1992-12
5. Study of the effect of low energy electron irradiation on the density and relaxation time of metal-insulator-GaAs interface states;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03
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