The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-018-0054-3.pdf
Reference51 articles.
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3. Kaschieva S, Rebohle L, Skorupa W (2003) Defect formation in oxygen- and boron- implanted MOS structures after. Appl Phys A Mater Sci Process 76:823–826. https://doi.org/10.1007/s00339-002-1963-x
4. Sumathi RR, Udhayasankar M, Kumar J, Magudapathy P, Nair KGM (2001) Effect of proton irradiation on the characteristics of GaAs Schottky barrier diodes. Phys B Condens Matter 308–310:1209–1212. https://doi.org/10.1016/S0921-4526(01)00944-9
5. Kumar S, Katharria YS, Batra Y, Kanjilal D (2007) Influence of swift heavy ion irradiation on electrical characteristics of au/ n -Si (1 0 0) Schottky barrier structure. J Phys D Appl Phys 40:6892–6897. https://doi.org/10.1088/0022-3727/40/22/006
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