Molecular dynamics simulation of Si and SiO2 reactive ion etching by fluorine-rich ion species-Reference-Cited by-同舟云学术

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Molecular dynamics simulation of Si and SiO2 reactive ion etching by fluorine-rich ion species

Published:2019-12 Issue: Volume:380 Page:125032
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Capdos Tinacba Erin Joy,Isobe Michiro,Karahashi Kazuhiro,Hamaguchi Satoshi

Funder

JSPS Grants-in-Aid for Scientific Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference30 articles.

1. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks;Iwase;Jpn. J. Appl. Phys.,2016

2. Architectural and integration options for 3D NAND flash memories;Micheloni;Computers,2017

3. Chemical sputtering of fluorinated silicon;Tu;Phys. Rev. B,1981

4. Gaseous products from the reaction of XeF2 with silicon;Winters;J. Appl. Phys.,1983

5. Surface science aspects of etching reactions;Winters;Surf. Sci. Rep.,1992

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1. Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study;Journal of Vacuum Science & Technology A;2024-08-05

2. Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations;Japanese Journal of Applied Physics;2024-07-01

3. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

4. High aspect ratio SiO₂/SiN (ON) stacked layer etching using C₃HF₅, C₄H₂F₆, and C₄H₄F₆;Japanese Journal of Applied Physics;2024-06-03

5. Surface chemical reactions of etch stop prevention in plasma-enhanced atomic layer etching of silicon nitride;Surface and Coatings Technology;2024-02

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