Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2stacks-Reference-Cited by-同舟云学术

Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2stacks

Published:2016-05-24 Issue:6S2 Volume:55 Page:06HB02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iwase Taku,Matsui Miyako,Yokogawa Kenetsu,Arase Takao,Mori Masahito

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=6S2/a=06HB02/pdf

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1. High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

2. Demonstration of scaled 0.099µm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology

3. Multi-Gate Fin Field-Effect Transistors Junctions Optimization by Conventional Ion Implantation for (Sub-)22 nm Technology Nodes Circuit Applications

4. Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory

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