A novel approach to quantitative determination of charge trapping near channel/drain edge in MOSFETs-Reference-Cited by-同舟云学术

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A novel approach to quantitative determination of charge trapping near channel/drain edge in MOSFETs

Published:2002-11 Issue:11 Volume:46 Page:2013-2016
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chen T.P,Huang Jiayi,Tse M.S,Zeng X

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Enhanced electron trapping near channel edges in NMOS transistors;Balasiński;IEEE Trans. Electron Dev.,1992

2. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs;Heremans;IEEE Trans. Electron Dev.,1988

3. A comprehensive study of hot-carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET’s;Wang;IEEE Trans. Electron Dev.,1999

4. Surface effects on P–N junctions-characteristics of surface space–charge regions under non-equilibrium conditions;Grove;Solid-State Electron.,1966

5. Determination of substrate doping, substrate carrier lifetime and density of surface recombination centers of MOSFETs by gate-controlled-diode measurements;Chen;Semicond. Sci. Technol.,1996

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-Terminal Write-Once-Read-Many-Times Memory Device Based on Charging-Controlled Current Modulation in Al/Al-Rich $\hbox{Al}_{2}\hbox{O}_{3}$/p-Si Diode;IEEE Transactions on Electron Devices;2011-04

2. A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potential;International Journal of Electronics;2005-05

3. A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current;Applied Physics Letters;2004-11

4. Gate oxide thickness dependence of edge charge trapping in nmos transistors caused by charge injection under constant-current stress;IEEE Transactions on Electron Devices;2003-06

5. Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal–oxide–semiconductor transistors;Applied Physics Letters;2003-05-05

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