A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current-Reference-Cited by-同舟云学术

A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current

Published:2004-11 Issue:18 Volume:85 Page:4211-4213
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Jiayi,Chen T. P.,Ang C. H.,Manju S.,Fung S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1810211

Reference11 articles.

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4. Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

5. N. Yang, W. K. Henson, and J. J. Wortman, International Electron Device Meeting Technical Digest (IEEE, Washington, DC, 1999), p. 453.

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1. Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature;Japanese Journal of Applied Physics;2012-02-20

2. Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature;Japanese Journal of Applied Physics;2012-02-01

3. Effect of off-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High Temperature;IEEE Electron Device Letters;2011-07