Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature-Reference-Cited by-同舟云学术

Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature

Published:2012-02-20 Issue:2 Volume:51 Page:02BC13
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Nam-Hyun,Kim Hyung-wook,Kang Bongkoo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. Dynamic Bias-Temperature Instability in Ultrathin SiO2and HfO2Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime

2. Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks

3. Impacts of gate electrode materials on threshold voltage (V/sub th/) instability in nMOS HfO/sub 2/ gate stacks under DC and AC stressing

4. Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

5. Effect of off-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High Temperature

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1. Lateral profiling of gate dielectric damage by off-state stress and positive-bias temperature instability;Microelectronics Reliability;2021-12

2. Effect of reverse body bias on hot-electron-induced punchthrough reliability of pMOSFETs with thin gate dielectric at high temperatures;Japanese Journal of Applied Physics;2016-05-06

3. Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperature;Japanese Journal of Applied Physics;2014-01-01

4. Effect of electron–electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs;Microelectronics Reliability;2012-09