Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters-Reference-Cited by-同舟云学术

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Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

Published:2009-09 Issue:9 Volume:56 Page:2155-2159
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Martin-Martinez Javier,Gerardin Simone,Amat Esteve,Rodriguez Rosana,Nafria Montserrat,Aymerich Xavier,Paccagnella Alessandro,Ghidini Gabriella

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5208517/05204243.pdf?arnumber=5204243

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Device and circuit-level evaluation of a zero-cost transistor architecture developed via process optimization;Solid-State Electronics;2023-03

4. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET;2022 International Conference on Information Science and Communications Technologies (ICISCT);2022-09-28

5. CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging;Solid-State Electronics;2022-05

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