Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs
Author:
Affiliation:
1. School of Integrated Circuits, Peking University,Beijing,China,100871
2. Shanghai Jiaotong University,National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Shanghai,China,200240
Funder
NSFC
111 Project
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529482.pdf?arnumber=10529482
Reference19 articles.
1. Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach
2. Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs
3. New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability
4. Modeling of HCD Kinetics for Full ${V}_{{G}}$ /${V}_{{D}}$ Span in the Presence of NBTI, Electron Trapping, and Self Heating in RMG SiGe p-FinFETs
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