Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology
Author:
Affiliation:
1. School of Integrated Circuits, Peking University,Beijing,China,100871
2. Shanghai Jiaotong University,National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Shanghai,China,200240
Funder
NSFC
111 Project
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117840.pdf?arnumber=10117840
Reference23 articles.
1. Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs
2. Understanding Hot Carrier Degradation and Variation in FinFET Technology
3. New Y-function-based methodology for accurate extraction of electrical parameters on nano-scaled MOSFETs
4. Abnormal Increment Substrate Current After Hot Carrier Stress in n-FinFET
5. Reverse Body Bias Dependence of HCI Reliability in Advanced FinFET
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms;Micromachines;2024-01-12
2. Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs;IEEE Transactions on Electron Devices;2023-12
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