New Y-function-based methodology for accurate extraction of electrical parameters on nano-scaled MOSFETs

Author:

Fleury Dominique,Cros Antoine,Brut Hugues,Ghibaudo Gerard

Publisher

IEEE

Cited by 55 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?;Solid-State Electronics;2023-11

2. Extraction of Drain Current Variability Components in Junctionless Nanowire Transistors;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17

3. Experimental Comparison of Threshold Voltage Extraction Methods in SOI Nanowire Transistors;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28

4. Low-field Mobility Degradation Factors Temperature Dependence in Two-level Stacked Nanowire MOSFETs from 120K to 400K;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28

5. Optimization of two major interfaces in MoS2 FETs with low frequency noise analysis;Journal of the Korean Physical Society;2023-05-16

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