Reverse Body Bias Dependence of HCI Reliability in Advanced FinFET
Author:
Affiliation:
1. Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754
2. Samsung Electronics,Samsung Foundry Business,Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764601.pdf?arnumber=9764601
Reference17 articles.
1. New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability
2. Hot-electron and hole-emission effects in short n-channel MOSFET's
3. A better understanding of substrate enhanced gate current in VLSI MOSFET's and flash cells. I. Phenomenological aspects
4. Performance, Degradation Monitors, and Reliability of the CHISEL Injection Regime
5. Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
2. Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs;IEEE Transactions on Electron Devices;2023-12
3. Temperature Effects on Electrical Response of FinFET Transistors in the Static Regime;IEEE Transactions on Electron Devices;2023-04
4. Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
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