Temperature Effects on Electrical Response of FinFET Transistors in the Static Regime-Reference-Cited by-同舟云学术

Temperature Effects on Electrical Response of FinFET Transistors in the Static Regime

Published:2023-04 Issue:4 Volume:70 Page:1595-1600
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nasri Faouzi¹^ORCID,Rekik Najeh²^ORCID,Bahri Haifa³,Farooq Umer²,Hussein A. Wahab M. A.²,Affan Hira²,Alabid Abdelhamid²,Ouari Bachir⁴

Affiliation:

1. Center Research in Microelectronics and Nanotechnology (CRMN), Hammam-Lif, Tunisia

2. Department of Physics, College of Science, University of Hail, Hail, Saudi Arabia

3. Laboratory of Electronics and Microelectronics, University of Monastir, Monastir, Tunisia

4. Laboratoire de Mathématiques et Physique, Université de Perpignan Via Domitia, Perpignan, France

Funder

Scientific Research Deanship at University of Hail- Saudi Arabia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10061618.pdf?arnumber=10061618

Reference24 articles.

1. A Mobility Stress Response Model of FinFET: Silicon vs Germanium

2. Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

3. Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model

4. A 14 nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 ?m2 SRAM cell size;natarajan;IEDM Tech Dig,2014

5. Electrical characterization and modeling of low dimensional nanostructure FET;lee,2011

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