Effects of the Electrical Polarizations on the Thermal Response of FinFET Nanotransistors-Reference-Cited by-同舟云学术

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Effects of the Electrical Polarizations on the Thermal Response of FinFET Nanotransistors

Published:2023-04-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Conference on Advanced Systems and Emergent Technologies (IC_ASET)
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Author:

Bahri Haifa¹,Nasri Faouzi²,Jaba Nejeh¹

Affiliation:

1. University of Monastir,Laboratory of electronics and microelectronics, Faculty of sciences of Monastir,Tunisia

2. Center for research in microelectronics & nanotechnology, Sousse Tunisia. Laboratory of thermal process Research and technology of energy,Tunis,Tunisia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10149846/10150436/10151359.pdf?arnumber=10151359

Reference22 articles.

1. Electrical characterization and modeling of low dimensional nanostructure FET;lee;Autre Université de Grenoble 239 - Korea University,2011

2. Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs

3. Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in $\hbox{n}^{+}$-Polysilicon Ultrathin Gate Oxide nMOSFETs

4. MOSFET electron inversion layer mobilities-A physical based semiempirical model for a wide temperature range;jeon;IEEE Trans Electron Dev 1995 36– 38 1456-63,0

5. Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

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