Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in $\hbox{n}^{+}$-Polysilicon Ultrathin Gate Oxide nMOSFETs-Reference-Cited by-同舟云学术

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Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in $\hbox{n}^{+}$-Polysilicon Ultrathin Gate Oxide nMOSFETs

Published:2011-04 Issue:4 Volume:58 Page:1038-1044
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Ming-Jer,Chang Sou-Chi,Kuang Shin-Jiun,Lee Chien-Chih,Lee Wei-Han,Cheng Kuan-Hao,Zhan Yi-Hsien

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5737855/05713248.pdf?arnumber=5713248

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of the Electrical Polarizations on the Thermal Response of FinFET Nanotransistors;2023 IEEE International Conference on Advanced Systems and Emergent Technologies (IC_ASET);2023-04-29

2. A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion Layers;IEEE Journal of the Electron Devices Society;2017-03

3. Description of low temperature bandtail states in two-dimensional semiconductors using path integral approach;Applied Physics Letters;2013-04-22

4. Error-Free Matthiessen's Rule in the MOSFET Universal Mobility Region;IEEE Transactions on Electron Devices;2013-02

5. Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric;Science China Information Sciences;2013-01-29

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