Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model-Reference-Cited by-同舟云学术

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Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model

Published:2021 Issue: Volume:9 Page:387-392
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Lee Ko-Hsin^ORCID,Erlebach Axel,Penzin Oleg,Smith Lee^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9359727/09381403.pdf?arnumber=9381403

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of 2D ReS2/WSe2 based complementary field-effect transistors towards 1 nm technology node;Microelectronic Engineering;2024-09

2. Effects of the Electrical Polarizations on the Thermal Response of FinFET Nanotransistors;2023 IEEE International Conference on Advanced Systems and Emergent Technologies (IC_ASET);2023-04-29

3. Temperature Effects on Electrical Response of FinFET Transistors in the Static Regime;IEEE Transactions on Electron Devices;2023-04

4. A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs;Nanomaterials;2022-09-28

5. Estimating the performance of SOI FinFET transistor using electro-thermal formulation in conjunction with the quasi-ballistic effective electron mobility approach;Micro and Nanostructures;2022-06

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