Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperature-Reference-Cited by-同舟云学术

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Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperature

Published:2014-01-01 Issue:4S Volume:53 Page:04EC06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Gang-Jun,Seo Ji-Hoon,Son Donghee,Lee Nam-Hyun,Kang YoungHa,Hwang YuChul,Kang Bongkoo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling

2. Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

3. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

4. Semiconductor Material and Device Characterization

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Channel width dependence of AC stress on bulk nMOSFETs;Microelectronics Reliability;2016-09

2. Effect of reverse body bias on hot-electron-induced punchthrough reliability of pMOSFETs with thin gate dielectric at high temperatures;Japanese Journal of Applied Physics;2016-05-06

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