Two-Terminal Write-Once-Read-Many-Times Memory Device Based on Charging-Controlled Current Modulation in Al/Al-Rich $\hbox{Al}_{2}\hbox{O}

Two-Terminal Write-Once-Read-Many-Times Memory Device Based on Charging-Controlled Current Modulation in Al/Al-Rich $\hbox{Al}_{2}\hbox{O}_{3}$/p-Si Diode

Published:2011-04 Issue:4 Volume:58 Page:960-965
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhu Wei,Chen T. P.,Liu Yang,Yang Ming,Fung S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5737855/05710410.pdf?arnumber=5710410

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