A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs-Reference-Cited by-同舟云学术

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A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs

Published:1999 Issue:9 Volume:46 Page:1877-1882
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tahui Wang ,Lu-Ping Chiang ,Nian-Kai Zous ,Charng-Feng Hsu ,Li-Yuan Huang ,Tien-Sheng Chao

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/17009/00784188.pdf?arnumber=784188

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs;IEEE Transactions on Electron Devices;2022-11

2. Role of gate electrode in influencing interface trap sensitivity in SOI tunnel FETs;Journal of Micromechanics and Microengineering;2022-03-07

3. Performance Degradation of Automotive Power MOSFETs Under Repetitive Avalanche Breakdown Test;IEEE Transactions on Transportation Electrification;2021-03

4. Impact of Hot Carrier Injection on Total Ionizing Dose Effect of 10-nm N-channel Bulk FinFETs;2020 5th IEEE International Conference on Emerging Electronics (ICEE);2020-11-26

5. Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET;IEEE Electron Device Letters;2020-06

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