Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs-Reference-Cited by-同舟云学术

Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs

Published:2022-11 Issue:11 Volume:69 Page:5965-5970
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Qian Yijun¹^ORCID,Gao Yuan²^ORCID,Shukla Amit Kumar¹,Sun Lu¹,Zou Xinbo¹^ORCID,Wu Tao¹^ORCID,Mu Zhiqiang²^ORCID,Lu Kai³^ORCID,Dong Yemin²^ORCID,Wei Xing²^ORCID,Yang Yumeng¹^ORCID

Affiliation:

1. Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, School of Information Science and Technology, ShanghaiTech University, Shanghai, China

2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

3. Shanghai Simchip Technology Group Company Ltd, Shanghai, China

Funder

National Science Foundation of China

Shanghai Pujiang Program

Shanghai Sailing Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09895216.pdf?arnumber=9895216

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1. Novel dynamic back-gate control technology for performance improvement in ultrathin double SOI LDMOS;Journal of Power Electronics;2024-08-05

2. Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. Analysis of Thermal Resistance Considering Self-Heating Effects and Ambient Temperature Coupling for Double-SOI MOSFETs;IEEE Transactions on Electron Devices;2023-10

4. The Study of Hot Carrier Effects on Double SOI NMOSFETs;Solid-State Electronics;2023-03