Impact of Hot Carrier Injection on Total Ionizing Dose Effect of 10-nm N-channel Bulk FinFETs-Reference-Cited by-同舟云学术

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Impact of Hot Carrier Injection on Total Ionizing Dose Effect of 10-nm N-channel Bulk FinFETs

Published:2020-11-26 Issue: Volume: Page:
ISSN:
Container-title:2020 5th IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Yogi Pritam¹,Kumar Manoj¹,Aditya Kritika¹,Gupta Charu¹,Dixit Abhisek¹

Affiliation:

1. Indian Institute of Technology, Delhi,Department of Electrical Engineering,New Delhi,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9776592/9776648/09776895.pdf?arnumber=9776895

Reference15 articles.

1. Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

2. Total dose dependence of hot carrier injection effect in the NMOS devices

3. Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs

4. Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering in Multifin SOI n-Channel FinFETs With Self-Heating

5. Total ionizing dose effects in MOS oxides and devices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Hot Carrier Degradation on Total Ionizing Dose in Bulk I/O-FinFETs;IEEE Transactions on Device and Materials Reliability;2024-09

2. The Correlation of Total Dose Effect and Hot Carrier Injection for Radiation Hardened MOS;2022 10th International Symposium on Next-Generation Electronics (ISNE);2023-05-12

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