Influence of Hot Carrier Degradation on Total Ionizing Dose in Bulk I/O-FinFETs
Author:
Affiliation:
1. Key Laboratory of Wide BandGap Semiconductor Materials and Devices, Xidian University, Xi’an, China
2. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/7298/10667659/10614355.pdf?arnumber=10614355
Reference26 articles.
1. Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Core Digital Structures
2. Investigation of the Off-State Degradation in Advanced FinFET Technology—Part I: Experiments and Analysis
3. Nonconducting RF and DC Hot Carrier Stresses in 14/16-nm FinFETs for RF Power Amplifiers
4. Effect of Frequency on Total Ionizing Dose Response of Ring Oscillator Circuits at the 7-nm Bulk FinFET Node
5. Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs
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