Effect of Frequency on Total Ionizing Dose Response of Ring Oscillator Circuits at the 7-nm Bulk FinFET Node
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA
Funder
Soft Error Consortium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/9735177/09686722.pdf?arnumber=9686722
Reference25 articles.
1. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics
2. Classical decomposition;hyndman;Forecasting Principles and Practice,2018
3. Statsmodels: Econometric and Statistical Modeling with Python
4. Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low Power
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