Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Core Digital Structures-Reference-Cited by-同舟云学术

Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Core Digital Structures

Published:2023-04 Issue:4 Volume:70 Page:620-626
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Wallace T.¹^ORCID,Spear M.¹,Privat A.¹^ORCID,Neuendank J.¹,Irumva G.¹,Wilson D.¹,Esqueda I. Sanchez¹^ORCID,Barnaby H. J.¹^ORCID,Turowski M.²,Mikkola E.²,Hughart D.³,Marinella M. J.¹^ORCID,Brunhaver J.¹,Gutierrez Amos³,Von Niederhausern R.⁴,Holloway S.¹,Beltran D.¹^ORCID,Taggart J. L.⁵^ORCID

Affiliation:

1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, USA

2. Alphacore Inc., Tempe, AZ, USA

3. Sandia National Laboratories, Albuquerque, NM, USA

4. Spacecraft Component Branch, Air Force Research Laboratory, Kirtland AFB, Albuquerque, NM, USA

5. The Aerospace Corporation, El Segundo, CA, USA

Funder

Navy Strategic & Spectrum Missions Advanced Resilient Trusted Systems (S2MARTS) program

SEEEC Grand Challenge, part of the Laboratory Directed Research and Development program at Sandia National Laboratories

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

https://ieeexplore.ieee.org/ielam/23/10103954/9962780-aam.pdf

Reference22 articles.

1. TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

2. Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors

3. Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies

4. TID-induced leakage and drive characteristics of planar 22-nm PDSOI and 14-nm bulk and quasi-SOI FinFET devices;king,2018

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