Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs-Reference-Cited by-同舟云学术

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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

Published:2023 Issue: Volume: Page:1-1
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Bonaldo Stefano¹^ORCID,Wallance Trace²^ORCID,Barnaby Hugh²^ORCID,Borghello Giulio³^ORCID,Termo Gennaro³^ORCID,Faccio Federico³^ORCID,Fleetwood Daniel M.⁴^ORCID,Mattiazzo Serena¹,Bagatin Marta¹^ORCID,Paccagnella Alessandro¹^ORCID,Gerardin Simone¹^ORCID

Affiliation:

1. University of Padova, Padova, Italy

2. Arizona State University, Tempe, AZ, USA

3. CERN, Geneva, Switzerland

4. Vanderbilt University, Nashville, TN, USA

Funder

National Institute for Nuclear Physics ? INFN, Italy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/4689328/10294314.pdf?arnumber=10294314

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