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Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

  • Published:2013-12 Issue:12 Volume:60 Page:4002-4007
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Cho Moonju,Roussel Philippe,Kaczer Ben,Degraeve Robin,Franco Jacopo,Aoulaiche Marc,Chiarella Thomas,Kauerauf Thomas,Horiguchi Naoto,Groeseneken Guido

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 59 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Electrothermal Effects on Hot Carrier Injection Reliability of n-Type FinFETs in Ring Oscillators;IEEE Transactions on Electron Devices;2024-02

3. Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs;IEEE Transactions on Electron Devices;2023-12

4. Subthreshold Swing Model of GaN-Based Fin-Gate High Electron Mobility Transistors;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

5. Energy Efficient Artificial Olfactory System with Integrated Sensing and Computing Capabilities for Food Spoilage Detection;Advanced Science;2023-08-31
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